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CGH40006S
CGH40006SReference image

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Mfr. #:
CGH40006S
Mfr.:
Batch:
new
Description:
RF JFET TransistorGaN HEMT DC-6.0GHz, 6 Watt Information about MACOM gan hemts
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN
Operating Frequency 2 GHz to 6 GHz
Gain 13 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 120 V
Vgs-Gate-Source Breakdown Voltage - 10 V to 2 V
Id-Continuous Drain Current 750 mA
Output Power 6.9 W
Maximum Drain/Gate Voltage -
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Pd-Power Dissipation -
Mounting Style SMD/SMT
Package/Case QFN-6
Package Reel, Cut Tape, MouseReel
Other product information

Advantage price,CGH40006S in stock can be shipped on the same day

In Stock: 1416
Qty.Unit PriceExt. Price
1+ $63.0263 $63.0263
10+ $57.5447 $575.447
25+ $54.8552 $1371.38
50+ $53.8850 $2694.25
200+ $50.0482 $10009.64
100+ $51.0167 $5101.67
200+ $50.0482 $10009.64
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
1416
Minimum:
1
MPQ:
1
Multiples:
1
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