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CGH40120F
CGH40120FReference image

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Mfr. #:
CGH40120F
Mfr.:
Batch:
new
Description:
RF JFET TransistorGaN HEMT DC-2.5GHz, 120 Watt Information about MACOM gan hemts
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN
Operating Frequency 1 GHz to 2.5 GHz
Gain 19 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 120 V
Vgs-Gate-Source Breakdown Voltage - 10 V to 2 V
Id-Continuous Drain Current 12 A
Output Power 120 W
Maximum Drain/Gate Voltage -
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Pd-Power Dissipation -
Mounting Style Screw Mount
Package/Case 440193
Package Tray
Other product information

Advantage price,CGH40120F in stock can be shipped on the same day

In Stock: 78
Qty.Unit PriceExt. Price
1+ $547.1483 $547.1483
10+ $518.6477 $5186.477
25+ $514.3282 $12858.205
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
78
Minimum:
1
MPQ:
1
Multiples:
1
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