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CGHV1J006D-GP4
CGHV1J006D-GP4Reference image

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Mfr. #:
CGHV1J006D-GP4
Mfr.:
Batch:
new
Description:
RF JFET TransistorGaN HEMT Die DC-18GHz, 6 Watt Information about MACOM gan hemts
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN
Operating Frequency 10 MHz to 18 GHz
Gain 17 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 100 V
Vgs-Gate-Source Breakdown Voltage - 10 V to 2 V
Id-Continuous Drain Current 800 mA
Output Power 6 W
Maximum Drain/Gate Voltage -
Minimum Operating Temperature
Maximum Operating Temperature
Pd-Power Dissipation -
Mounting Style SMD/SMT
Package/Case Die
Package Gel Pack
Other product information

Advantage price,CGHV1J006D-GP4 in stock can be shipped on the same day

In Stock: 70
Qty.Unit PriceExt. Price
10+ $91.1481 $911.481
30+ $88.3395 $2650.185
50+ $86.6309 $4331.545
100+ $81.9161 $8191.61
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
70
Minimum:
10
MPQ:
10
Multiples:
1
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