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MTD8600N-T
MTD8600N-TReference image

Images are for reference only

Mfr. #:
MTD8600N-T
Batch:
new
Description:
Photo Transistor Photo Diode 880nm
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Product Phototransistors
Package/Case TO-18-2
Mounting Style Through Hole
Peak Wavelength 880 nm
Operating Supply Voltage
On-State Collector Maximum Current 50 mA
Collector-Emitter Maximum Voltage VCEO 30 V
Collector-Emitter Breakdown Voltage 30 V
Collector-Emitter Saturation Voltage 200 mV
Dark Current 100 nA
Rise Time 10 us
Fall Time 10 us
Pd-Power Dissipation 250 mW
Minimum Operating Temperature - 30 C
Maximum Operating Temperature 100 C
Series
Qualification
Other product information

Advantage price,MTD8600N-T in stock can be shipped on the same day

In Stock: Inquiry
Qty.Unit PriceExt. Price
1+ $7.1493 $7.1493
10+ $5.0527 $50.527
25+ $4.9019 $122.5475
100+ $4.1440 $414.4
250+ $4.0422 $1010.55
500+ $3.4860 $1743
1000+ $3.0702 $3070.2
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
1
MPQ:
1
Multiples:
1
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