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QPD1016
QPD1016Reference image

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Mfr. #:
QPD1016
Mfr.:
Batch:
new
Description:
RF JFET Transistor DC-1.7 GHz, 500W, 50V, GaN RF Tr
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor type HEMT
Technology GaN-on-SiC
Operating frequency DC to 1.7 GHz
Gain 23.9 dB
Transistor polarity N-Channel
Vds-Drain-Source Breakdown Voltage 145 V
Vgs-Gate-Source Breakdown Voltage - 7 V to 1.5 V
Id-Continuous Drain Current 70 A
Output Power 680 W
Maximum Drain/Gate Voltage 55 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 85 C
Pd-Power Dissipation 714 W
Mounting style SMD/SMT
Package/Case NI780-2
Package
Other product information

Advantage price,QPD1016 in stock can be shipped on the same day

In Stock: 6
Qty.Unit PriceExt. Price
1+ $1278.3960 $1278.396
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
6
Minimum:
1
MPQ:
1
Multiples:
1
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