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QPD1015
QPD1015Reference image

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Mfr. #:
QPD1015
Mfr.:
Batch:
new
Description:
RF JFET Transistor DC-3.7GHz 65W 50V SSG 20dB GaN
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 3.7 GHz
Gain 20 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 50 V
Vgs-Gate-Source Breakdown Voltage 145 V
Id-Continuous Drain Current 2.5 A
Output Power 70 W
Maximum Drain/Gate Voltage
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 85 C
Pd-Power Dissipation 64 W
Mounting Style SMD/SMT
Package/Case NI-360
Package Tray
Other product information

Advantage price,QPD1015 in stock can be shipped on the same day

In Stock: Inquiry
Qty.Unit PriceExt. Price
1+ $381.6591 $381.6591
25+ $254.1999 $6354.9975
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
1
MPQ:
1
Multiples:
1
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