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QPD1010
QPD1010Reference image

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Mfr. #:
QPD1010
Mfr.:
Batch:
new
Description:
RF JFET Transistor DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 4 GHz
Gain 24.7 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 50 V
Vgs-Gate-Source Breakdown Voltage 145 V
Id-Continuous Drain Current 400 mA
Output Power 11 W
Maximum Drain/Gate Voltage
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 85 C
Pd-Power Dissipation 13.5 W
Mounting Style SMD/SMT
Package/Case QFN-16
Package Waffle
Other product information

Advantage price,QPD1010 in stock can be shipped on the same day

In Stock: 200
Qty.Unit PriceExt. Price
1+ $87.6949 $87.6949
25+ $43.8483 $1096.2075
100+ $42.6107 $4261.07
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
200
Minimum:
1
MPQ:
1
Multiples:
1
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