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CE3512K2
CE3512K2Reference image

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Mfr. #:
CE3512K2
Mfr.:
Batch:
new
Description:
RF JFET Transistor 12GHz NF .3dB Ga 13.7dB -55C 125C
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type pHEMT
Technology GaAs
Operating Frequency
Gain
Transistor Polarity
Vds-Drain-Source Breakdown Voltage 4 V
Vgs-Gate-Source Breakdown Voltage
Id-Continuous Drain Current 10 mA
Output Power
Maximum Drain/Gate Voltage
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 125 C
Pd-Power Dissipation 125 mW
Mounting Style SMD/SMT
Package/Case
Package Bulk
Other product information

Advantage price,CE3512K2 in stock can be shipped on the same day

In Stock: 213
Qty.Unit PriceExt. Price
1+ $2.6986 $2.6986
10+ $1.7206 $17.206
100+ $1.2874 $128.74
250+ $1.1912 $297.8
500+ $1.0640 $532
1000+ $0.9677 $967.7
2500+ $0.8972 $2243
5000+ $0.8818 $4409
10000+ $0.8663 $8663
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
213
Minimum:
1
MPQ:
1
Multiples:
1
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