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TGF2819-FL
TGF2819-FLReference image

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Mfr. #:
TGF2819-FL
Mfr.:
Batch:
new
Description:
RF JFET Transistor DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Type HEMT
Technology GaN-on-SiC
Operating Frequency 3.5 GHz
Gain 14 dB
Transistor Polarity N-Channel
Vds-Drain-Source Breakdown Voltage 32 V
Vgs-Gate-Source Breakdown Voltage - 2.9 V
Id-Continuous Drain Current 7.32 A
Output Power 100 W
Maximum Drain/Gate Voltage 145 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 85 C
Pd-Power Dissipation 86 W
Mounting Style Screw Mount
Package/Case NI-360
Package Tray
Other product information

Advantage price,TGF2819-FL in stock can be shipped on the same day

In Stock: Inquiry
Qty.Unit PriceExt. Price
1+ $868.4373 $868.4373
25+ $578.9662 $14474.155
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
1
MPQ:
1
Multiples:
1
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