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MRF101AN
MRF101ANReference image

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Mfr. #:
MRF101AN
Batch:
new
Description:
Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Polarity N-Channel
Technology Si
Id-Continuous Drain Current 8.8 A
Vds-Drain-Source Breakdown Voltage 133 V
Rds On-Drain-Source On-Resistance
Operating Frequency 1.8 MHz to 250 MHz
Gain 21.1 dB
Output Power 100 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Mounting Style Through Hole
Package/Case TO-220-3
Package Tube
Other product information

Advantage price,MRF101AN in stock can be shipped on the same day

In Stock: 1968
Qty.Unit PriceExt. Price
1+ $36.4344 $36.4344
10+ $28.1093 $281.093
25+ $25.6748 $641.87
50+ $24.6921 $1234.605
100+ $22.5639 $2256.39
250+ $22.2452 $5561.3
500+ $21.7990 $10899.5
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
1968
Minimum:
1
MPQ:
1
Multiples:
1
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