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PD55003S-E
PD55003S-EReference image

Images are for reference only

Mfr. #:
PD55003S-E
Batch:
new
Description:
RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor POWER RF
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Polarity N-Channel
Technology Si
Id-Continuous Drain Current 2.5 A
Vds-Drain-Source Breakdown Voltage 40 V
Rds On-Drain-Source On-Resistance
Operating Frequency 1 GHz
Gain 17 dB
Output Power 3 W
Minimum Operating Temperature - 65 C
Maximum Operating Temperature 150 C
Mounting Style SMD/SMT
Package/Case PowerSO-10RF-Straight-4
Package Tube
Other product information

Advantage price,PD55003S-E in stock can be shipped on the same day

In Stock: 475
Qty.Unit PriceExt. Price
1+ $14.7651 $14.7651
10+ $13.2301 $132.301
25+ $12.4618 $311.545
100+ $10.9647 $1096.47
250+ $10.4456 $2611.4
400+ $8.3657 $3346.28
1200+ $8.3039 $9964.68
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
475
Minimum:
1
MPQ:
1
Multiples:
1
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